This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Christiansen, Received 21 March 2012 Revised 10 July 2012 Accepted 28 July 2012 Academic Editor: Jung-Hui TsaiĬopyright © 2012 Bradley D. Sheal圓ġĝepartment of Electrical and Computer Engineering, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USAĢ Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, USAģĝefense and Power Business Unit, RF Micro Devices, Inc., Charlotte, NC 28269, USAĬorrespondence should be addressed to Bradley D. Coutu Jr.,1 Ramakrishna Vetury,3 and Jeffrey B. Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2012, Article ID 493239, 4 pages doi:10.1155/2012/493239Ī Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Currentīradley D.
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